BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 67

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Dual fractional-N PLL synthesizer
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/rf
RF/IF mixers with VCO
(1)
SA8027
Product
SA601
SA620
SA612A/01
SA602A/01
GSM f
REF
DH
(TSSOP20)
= 13 MHz (TCXO), fCOMP = 1 MHz, f
Package
DK (SSOP20)
DK (SSOP20)
D (SO8)
N (DIP8)
D (SO8)
N (DIP8)
2.7 to 3.6
V
CC
2.7 to 5.5
2.7 to 5.5
4.5 to 8.0
4.5 to 8.0
range (V)
operating
7.7
RF
= 900 MHz, 1-kHz offset (dBc/Hz)
1
I
CC
(mA)
10.4
7.4
2.8
2.8
max
350 /
2500
frequency typ (MHz)
-18 / 0
800-1200
800-1200
RF input
Main VCO
500
500
(2)
65535
512 /
TDMA f
REF
LO frequency
= 19.44 MHz (TCXO), fCOMP = 240 kHz
4
typ (MHz)
1200
1200
200
200
100 / 550
min/typ/max (dB)
14.5 / 16 / 17.5
-15 / 0
18 / 19.5 / 21
Mixer gain
14 / 17 /–
14 / 17 /–
16383
128 /
Auxiliary VCO
S21 typ (dB)
LNA gain
5 / 40
No LNA
No LNA
11.5
11.5
360 /
1300
order intercept IIP3 typ/max (dBm)
4 / 1023
LNA input third-
-2.0 / -0.5
-3.0 / -1.5
No LNA
No LNA
-90
GSM
Synthesizer phase noise
(1)
-83
LNA noise figure
-85
typ/max (dB)
TDMA
1.6 / 1.9
1.6 / 1.9
No LNA
No LNA
(2)
-77
67