BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 2
![TRANS BASESTATION 2-LDMOST](/photos/5/64/56482/sot539a_sml.jpg)
BLF6G22-180PN,112
Manufacturer Part Number
BLF6G22-180PN,112
Description
TRANS BASESTATION 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G22-180PN112.pdf
(11 pages)
Specifications of BLF6G22-180PN,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
17.5dB
Voltage - Rated
65V
Current - Test
1.6A
Voltage - Test
32V
Power - Output
50W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061276112
BLF6G22-180PN
BLF6G22-180PN
BLF6G22-180PN
BLF6G22-180PN
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22-180PN_2
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4
5
Type number
BLF6G22-180PN -
Symbol
V
V
T
T
T
Symbol
R
stg
case
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
Rev. 02 — 23 April 2008
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
[1]
Simplified outline
Conditions
T
case
BLF6G22-180PN
= 80 C; P
1
3
2
4
Power LDMOS transistor
L(AV)
5
= 50 W
Graphic symbol
Min
-
-
-
© NXP B.V. 2008. All rights reserved.
0.5
65
3
4
Max
65
+13
+150
150
225
Version
SOT539A
Typ
0.45 K/W
1
2
sym117
2 of 11
5
Unit
V
V
Unit
C
C
C