BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G22-180PN,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276112; BLF6G22-180PN; BLF6G22-180PN

NXP Semiconductors
BLF6G22-180PN_2
Product data sheet
Fig 9.
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with
See
Component layout for 2110 MHz and 2170 MHz test circuit
Table 9
INPUT
for list of components.
C1
C2
Table 9.
For test circuit, see
[1]
[2]
Component
C1, C3, C5
C2, C8, C16
C4, C6
C7, C14
C9
C10, C11, C15
C12
C13
R1
R2, R3
BLF6G22-180PN
C5
C3
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 180R or capacitor of same quality.
C6
C4
List of components
TB
R1
Description
ATC multilayer ceramic chip capacitor
TDK multilayer ceramic chip capacitor
TDK multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
electrolytic capacitor
Murata ceramic chip capacitor
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
chip resistor
chip resistor
Figure 8
Rev. 02 — 23 April 2008
R2
R3
and
Figure
9.
C8
C10
C11
C7
BLF6G22-180PN
C14 C15
C12
BLF6G22-180PN
r
C9
Value
10 pF
4.7 F
220 nF
10 pF
220 F; 63 V
100 nF
15 pF
0.3 pF
33
5.6
= 3.5 and thickness = 0.76 mm.
C16
Power LDMOS transistor
TB
OUTPUT
© NXP B.V. 2008. All rights reserved.
C13
001aah640
[1]
[2]
[2]
[1]
Remarks
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