BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G22-180PN,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276112; BLF6G22-180PN; BLF6G22-180PN

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G22-180PN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
I
The BLF6G22-180PN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
G
RL
ACPR
Symbol Parameter
PAR
Dq
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
p
= 25 C per section; unless otherwise specified.
in
= 1600 mA; T
= 1600 mA; P
O
output peak-to-average ratio
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Characteristics
Application information
Application information
case
L
= 180 W (CW); f = 2170 MHz.
DS
= 25 C; unless otherwise specified; in a class-AB production test circuit.
= 32 V; I
Rev. 02 — 23 April 2008
1
1
= 2112.5 MHz; f
= 2162.5 MHz; f
Dq
= 1600 mA; T
Conditions
P
at 0.01 % probability on CCDF
L(AV)
Conditions
V
V
V
V
V
V
V
V
I
D
2
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
V
V
= 5 A
= 2117.5 MHz; f
= 2167.5 MHz; RF performance at V
DS
DS
= 115 W;
= 10 V; I
= 32 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V
= V
= 11 V; V
= V
case
= 28 V
= 60 V
Conditions
P
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
D
D
D
D
= 50 W
= 50 W
= 50 W
= 50 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 144 mA
= 800 mA
= 7.2 A
= 0 V
BLF6G22-180PN
3
= 2162.5 MHz; f
Power LDMOS transistor
Min
65
1.575 1.9
1.725 2.1
-
-
-
-
-
-
Min
16.3
-
25
-
DS
Min Typ Max Unit
4.05 4.5
= 28 V;
Typ
-
-
-
25
-
10
0.1
© NXP B.V. 2008. All rights reserved.
Typ
17.5 18.7
27.5 -
4
10
35
= 2167.5 MHz;
DS
= 32 V;
Max
Max
-
2.3
2.45
3
5
-
300
-
0.165
6.5
33
-
3 of 11
Unit
dB
dB
%
dBc
dB
Unit
V
V
V
A
nA
S
A
A