BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G22-180PN,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276112; BLF6G22-180PN; BLF6G22-180PN

NXP Semiconductors
8. Test information
BLF6G22-180PN_2
Product data sheet
Fig 8.
input
50
See
Test circuit for operation at 2110 MHz and 2170 MHz
Table 9
C1
for list of components.
Rev. 02 — 23 April 2008
C5
C2
R1
C6
C3
C4
R2
R3
C7
BLF6G22-180PN
C8
C14
C9
C12
C15
Power LDMOS transistor
C10
C16
C11
© NXP B.V. 2008. All rights reserved.
C13
001aah639
output
50
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