BLF881,112 NXP Semiconductors, BLF881,112 Datasheet - Page 15
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BLF881,112
Manufacturer Part Number
BLF881,112
Description
TRANSISTOR PWR UHF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF881112.pdf
(18 pages)
Specifications of BLF881,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
21dB
Voltage - Rated
104V
Voltage - Test
50V
Package / Case
SOT467C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
140W(Typ)
Power Gain (typ)@vds
21@50VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
3
Drain Source Resistance (max)
210(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
100@50VpF
Output Capacitance (typ)@vds
33.5@50VpF
Reverse Capacitance (typ)
1@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
49%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
Compliant
Other names
934063947112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF881,112
Manufacturer:
FLOETH
Quantity:
450
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF881_BLF881S
Product data sheet
Document ID
BLF881_BLF881S v.3
Modifications:
BLF881_BLF881S v.2
BLF881_BLF881S v.1
Revision history
Table 9.
Acronym
CW
CCDF
DVB
DVB-T
ESD
HF
IMD3
LDMOS
LDMOST
OFDM
PAR
PEP
RF
TTF
UHF
VSWR
Release date
20101207
20100210
20091210
•
Table 6 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
3: In the conditions column of V
Rev. 3 — 7 December 2010
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
High Frequency
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
GS(th)
BLF881; BLF881S
the value of I
UHF power LDMOS transistor
BLF881_BLF881S v.2
BLF881_BLF881S v.1
-
Supersedes
D
has been changed
© NXP B.V. 2010. All rights reserved.
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