BLF881,112 NXP Semiconductors, BLF881,112 Datasheet - Page 15

• Manufacturer Part Number: BLF881,112
• Description: TRANSISTOR PWR UHF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF881,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 21dB
• Voltage - Rated: 104V
• Voltage - Test: 50V
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 140W(Typ)
• Power Gain (typ)@vds: 21@50VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 100@50VpF
• Output Capacitance (typ)@vds: 33.5@50VpF
• Reverse Capacitance (typ): 1@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 49%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063947112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF881_BLF881S
Product data sheet
Document ID
BLF881_BLF881S v.3
Modifications:
BLF881_BLF881S v.2
BLF881_BLF881S v.1
Revision history
Table 9.
Acronym
CW
CCDF
DVB
DVB-T
ESD
HF
IMD3
LDMOS
LDMOST
OFDM
PAR
PEP
RF
TTF
UHF
VSWR
Release date
20101207
20100210
20091210
•
Table 6 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
3: In the conditions column of V
Rev. 3 — 7 December 2010
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
High Frequency
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
GS(th)
BLF881; BLF881S
the value of I
UHF power LDMOS transistor
BLF881_BLF881S v.2
BLF881_BLF881S v.1
-
Supersedes
D
has been changed
© NXP B.V. 2010. All rights reserved.
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