BLF881,112 NXP Semiconductors, BLF881,112 Datasheet - Page 6

• Manufacturer Part Number: BLF881,112
• Description: TRANSISTOR PWR UHF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF881,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 21dB
• Voltage - Rated: 104V
• Voltage - Test: 50V
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 140W(Typ)
• Power Gain (typ)@vds: 21@50VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 100@50VpF
• Output Capacitance (typ)@vds: 33.5@50VpF
• Reverse Capacitance (typ): 1@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 49%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063947112

NXP Semiconductors
BLF881_BLF881S
Product data sheet
Fig 5.
(dB)
G
p
23
22
21
20
19
18
17
16
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and drain efficiency as
function of average load power; typical values
DS
= 50 V; I
7.1.3 DVB-T
G
η
D
p
Dq
30
= 0.5 A; measured in a common-source
60
P
L(AV)
All information provided in this document is subject to legal disclaimers.
001aal078
(W)
Rev. 3 — 7 December 2010
90
70
60
50
40
30
20
10
0
(%)
η
D
Fig 6.
IMD
(dBc)
(1) Lower adjacent channel
(2) Upper adjacent channel
shldr
−10
−20
−30
−40
−50
0
0
V
narrowband 860 MHz test circuit.
DVB-T shoulder distance as a function of
average load power; typical values
DS
= 50 V; I
(1)
(2)
BLF881; BLF881S
Dq
30
= 0.5 A; measured in a common-source
UHF power LDMOS transistor
60
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aal079
(W)
90
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