BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet

TRANS LDMOS 3.5GHZ SOT608A

BLS6G3135-20,112

Manufacturer Part Number
BLS6G3135-20,112
Description
TRANS LDMOS 3.5GHZ SOT608A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS6G3135-20,112

Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
3.1GHz ~ 3.5GHz
Gain
15.5dB
Voltage - Rated
60V
Current Rating
2.1A
Current - Test
50mA
Voltage - Test
32V
Power - Output
20W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.58 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
- 0.5 V to + 13 V
Continuous Drain Current
2.1 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
S-Band
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
60V
Output Power (max)
20W(Typ)
Power Gain (typ)@vds
15.5@32VdB
Frequency (min)
3.1GHz
Frequency (max)
3.5GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
2.8S
Drain Source Resistance (max)
580mohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
45%
Mounting
Screw
Mode Of Operation
Pulsed RF
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934060062112
BLS6G3135-20
BLS6G3135-20
1. Product profile
CAUTION
1.1 General description
1.2 Features
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical RF performance at T
production test circuit.
I
I
I
I
I
I
I
I
Mode of operation f
Pulsed RF
BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Output power = 20 W
Power gain = 15.5 dB
Efficiency = 45 %
Typical performance
Dq
of 50 mA, a t
(GHz)
3.1 to 3.5 32
case
= 25 C; t
V
(V)
p
DS
of 300 s and a of 10 %:
p
= 300 s; = 10 %; I
P
(W)
20
L
G
(dB)
15.5
p
Dq
(%)
45
= 50 mA; in a class-AB
D
Product data sheet
t
(ns)
20
r
t
(ns)
10
f

Related parts for BLS6G3135-20,112

BLS6G3135-20,112 Summary of contents

Page 1

... BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation f Pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... Pinning information Table 2. Pin BLS6G3135-20 (SOT608A BLS6G3135S-20 (SOT608B [1] Connected to flange. 3. Ordering information Table 3. Type number BLS6G3135-20 BLS6G3135S- Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Pinning ...

Page 3

... unless otherwise specified class-AB production circuit. case Symbol BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage V drain leakage current V drain cut-off current V V gate leakage current ...

Page 4

... Measured with Z Fig 1. 7.2 Ruggedness in class-AB operation The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Typical impedance ...

Page 5

... Power gain and drain efficiency as functions of frequency; typical values 60 D (%) mA ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 4. Efficiency as a function of load power; typical values BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 001aaf983 (%) (dB 3.4 3.6 f (GHz) = 300 ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 3. 001aaf985 P (1) (W) ...

Page 6

... Power gain and drain efficiency as functions of frequency; typical values 60 D (%) mA ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 8. Efficiency as a function of load power; typical values BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 001aaf987 (%) (dB 3.4 3.6 f (GHz ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 7. 001aaf989 (1) P ...

Page 7

... C13 L1 R1 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S- 4-line Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor electrolytic capacitor copper wire resistor Rev. 03 — ...

Page 8

... UNIT 7.24 4.62 0.15 10.21 mm 6.99 3.76 0.10 10.01 0.182 0.285 0.402 0.006 inches 0.148 0.275 0.394 0.004 OUTLINE VERSION IEC SOT608A Fig 11. Package outline SOT608A BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S- scale 10.29 10.21 10.29 1.14 15.75 3.30 2.92 10.03 10 ...

Page 9

... DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT 4.62 7.24 0.15 10.21 mm 3.76 6.99 0.10 10.01 0.182 0.285 0.006 0.402 inch 0.148 0.275 0.004 0.394 OUTLINE VERSION IEC SOT608B Fig 12. Package outline SOT608B BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S- scale 10.29 10.21 10.29 1.14 15 ...

Page 10

... Table 11. Revision history Document ID BLS6G3135-20_6G3135S-20_3 20090303 Modifications: BLS6G3135-20_6G3135S-20_2 20081217 BLS6G3135-20_6G3135S-20_1 20070307 BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status Product data sheet • ...

Page 11

... For more information, please visit: For sales office addresses, please send an email to: BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 March 2009 Document identifier: BLS6G3135-20_6G3135S-20_3 ...

Related keywords