BLS6G3135-120,112 NXP Semiconductors, BLS6G3135-120,112 Datasheet

TRANS LDMOS 3.5GHZ SOT502B

BLS6G3135-120,112

Manufacturer Part Number
BLS6G3135-120,112
Description
TRANS LDMOS 3.5GHZ SOT502B
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G3135-120112.pdf (12 pages)

Specifications of BLS6G3135-120,112

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
3.1GHz ~ 3.5GHz
Gain
11dB
Voltage - Rated
60V
Current Rating
7.2A
Current - Test
100mA
Voltage - Test
32V
Power - Output
130W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
7.2 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060063112
BLS6G3135-120
BLS6G3135-120

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BLS6G3135-120,112
Manufacturer:
FREESCALE
Quantity:
1 400
1. Product profile
CAUTION
1.1 General description
1.2 Features
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical RF performance at T
production test circuit.
I
I
I
I
I
I
I
I
I
Mode of operation
pulsed RF
BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 02 — 29 May 2008
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Output power = 120 W
Gain = 11 dB
Efficiency = 43 %
Typical performance
Dq
of 100 mA, a t
case
f
(GHz)
3.1 to 3.5
= 25 C; t
p
of up to 300 s with of 10 %:
V
(V)
32
DS
p
= 300 s; = 10 %; I
P
(W)
120
L
G
(dB)
11
Dq
p
= 100 mA; in a class-AB
(%)
43
D
Product data sheet
t
(ns)
20
r
t
(ns)
6
f

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BLS6G3135-120,112 Summary of contents

Page 1

... BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... Pinning information Table 2. Pin BLS6G3135-120 (SOT502A BLS6G3135S-120 (SOT502B [1] Connected to flange 3. Ordering information Table 3. Type number BLS6G3135-120 BLS6G3135S-120 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Pinning ...

Page 3

... DSX I gate leakage current GSS g forward transconductance fs R drain-source on-state DS(on) resistance 7. Application information Table 7. Mode of operation: pulsed RF unless otherwise specified class-AB production circuit. case Symbol IRL P L(1dB BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Thermal characteristics Characteristics Conditions 180 8 6 Application information = 300 s ...

Page 4

... NXP Semiconductors Table 8. f GHz 3.1 3.2 3.3 3.4 3.5 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions (dB 3 100 mA 300 120 W. ...

Page 5

... 100 mA 100 120 W. L Fig 6. Power gain and drain efficiency as functions of frequency; typical values BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 001aag825 160 ( (2) (W) 120 ( 120 160 P ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz V Fig 5. Load power as a function of input power; ...

Page 6

... D (%) ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz 100 mA 100 Fig 8. Drain efficiency as a function of load power; typical values BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 001aag829 160 (1) P (2) L (W) 120 ( 120 160 0 P ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 9. Load power as a function of input power; ...

Page 7

... C1, C2, C4, C5, C6, C7, C8, C9, C11 C3 C10 C12 C13 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 700A or capacitor of same quality. BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 4-line 6.2 and thickness = 0.64 mm. Table 9 for list of components. List of components (see ...

Page 8

... OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 scale 9.50 9.53 1.14 19.94 5.33 3 ...

Page 9

... OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 scale 9.50 9.53 1.14 19.94 5.33 1 ...

Page 10

... Revision history Table 11. Revision history Document ID BLS6G3135-120_6G3135S-120_2 Modifications: BLS6G3135-120_6G3135S-120_1 BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Lateral Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status ...

Page 11

... Contact information For additional information, please visit: For sales office addresses, send an email to: BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com LDMOS S-Band radar power transistor All rights reserved. Date of release: 29 May 2008 Document identifier: BLS6G3135-120_6G3135S-120_2 ...

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