BLS6G3135-120,112 NXP Semiconductors, BLS6G3135-120,112 Datasheet - Page 3

• Manufacturer Part Number: BLS6G3135-120,112
• Description: TRANS LDMOS 3.5GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-120,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 11dB
• Voltage - Rated: 60V
• Current Rating: 7.2A
• Current - Test: 100mA
• Voltage - Test: 32V
• Power - Output: 130W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 7.2 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060063112; BLS6G3135-120; BLS6G3135-120

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLS6G3135-120_6G3135S-120_2
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol Parameter
Z
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
IRL
P
t
t
DSS
DSX
GSS
r
f
j
case
fs
th(j-mb)
D
(BR)DSS
GS(th)
L
CC
L(1dB)
DS(on)
p
= 25 C unless otherwise specified.
= 25 C; unless otherwise specified, in a class-AB production circuit.
transient thermal impedance from
junction to mounting base
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
rise time
fall time
Thermal characteristics
Characteristics
Application information
BLS6G3135-120; BLS6G3135S-120
Rev. 02 — 29 May 2008
p
= 300 s; = 10 %; RF performance at V
Conditions
V
V
I
V
V
V
V
V
V
I
D
D
GS
DS
GS
GS
DS
GS
DS
GS
= 180 mA
= 6.3 A
= 10 V;
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 8.3 V; V
= V
GS(th)
GS(th)
Conditions
T
case
LDMOS S-Band radar power transistor
t
t
p
p
D
DS
D
= 300 s; = 10 %
= 100 s; = 20 %
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
Conditions
P
P
P
P
P
P
P
= 85 C; P
DS
= 9 A
L
L
L
L
L
L
L
= 28 V
= 120 W
= 120 W
= 120 W
= 120 W
= 120 W
= 120 W
= 120 W
= 0 V
L
= 120 W
Min
60
1.4
-
27
-
-
-
Min Typ Max
-
-
9.5
6
-
39
-
-
DS
= 32 V; I
Typ
-
1.8
-
33
-
13
0.085 0.160
© NXP B.V. 2008. All rights reserved.
120
-
11
10
130
43
20
6
Typ Max Unit
0.29 0.40 K/W
0.30 0.41 K/W
Dq
Max
-
2.3
5
-
450
-
-
32
-
-
-
-
50
50
= 100 mA;
Unit
W
V
dB
dB
W
%
ns
ns
3 of 12
Unit
V
V
A
nA
S
A