PD57045-E STMicroelectronics, PD57045-E Datasheet - Page 6

• Manufacturer Part Number: PD57045-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57045-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 5A
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 45W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 65V
• Output Power (max): 45W(Min)
• Power Gain (typ)@vds: 14.5dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 3
• Forward Transconductance (typ): 2.7S
• Input Capacitance (typ)@vds: 86@28VpF
• Output Capacitance (typ)@vds: 47@28VpF
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Typical performance
4
6/20
Figure 3.
Figure 5.
C (pF)
1000
100
1.04
1.02
0.98
0.96
10
1
1
-25
0
f= 1 M H z
V
Typical performance
DS
Capacitance vs drain voltage
Gate-source voltage vs
case temperature
5
= 10 V
0
Tc, CASE TEMPERATURE (°C)
10
VDS (V)
15
25
20
I
50
D
= .25 A
25
I
D
= 1 A
I
I
D
D
Doc ID 12616 Rev 2
I
C rs s
C is s
D
= 1.5 A
C o s s
= 3A
= 2A
30
75
Figure 4.
Figure 6.
Id (A)
0.1
10
3.5
2.5
1.5
0.5
1
4
3
2
0
1
2.5
1
T j = 1 6 5 C
Vds= 10 V
Drain current vs gate voltage
Safe operating area
3
VGS, GATE-SOURCE VOLTAGE (V)
3.5
Vds (V)
Tc = 1 0 0
PD57045-E, PD57045S-E
10
Tc = 7 0
C
4
C
Tc = 2 5
4.5
C
100
5