MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet
MRFE6S9046GNR1
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MRFE6S9046GNR1 Summary of contents
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... PARTS ARE SINGLE - ENDED out out (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Symbol Value Unit V - 0.5, +66 Vdc DSS V - 6.0, +10 Vdc GS V 32, +0 Vdc +150 °C stg T 150 ° 225 °C J MRFE6S9046NR1 MRFE6S9046GNR1 / ...
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... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRFE6S9046NR1 MRFE6S9046GNR1 2 = 300 300 mA DQ ...
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... Vdc 285 mA — 19 — dB — 42.5 — % — 2.1 — % rms — - 62.5 — dBc — — dBc MRFE6S9046NR1 MRFE6S9046GNR1 3 ...
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... Chip Capacitor C3, C4 6.8 pF Chip Capacitors C5, C11, C14 10 μ Chip Capacitors C6, C7 3.3 pF Chip Capacitors C8 4.7 pF Chip Capacitor C10, C13 39 pF Chip Capacitors C12 470 μ Electrolytic Capacitor R1 4.7 KΩ, 1/4 W Chip Resistor MRFE6S9046NR1 MRFE6S9046GNR1 Z10 Z11 DUT C3 C13 Z10 0.040″ ...
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... TO270−WB 2 GHz Rev. 3 − Input Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — GSM EDGE Reference Design RF Device Data Freescale Semiconductor C10 C13 C12 C11 C8 C9 TO270−WB 2 GHz Rev. 3 − Output C14 V DS MRFE6S9046NR1 MRFE6S9046GNR1 5 ...
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... I = 450 mA 375 300 mA 19 225 mA 18 150 940 MHz OUTPUT POWER (WATTS) CW out Figure 6. Power Gain versus Output Power MRFE6S9046NR1 MRFE6S9046GNR1 6 TYPICAL CHARACTERISTICS η Vdc 35 300 mA DD out DQ IRL 925 930 935 940 945 950 f, FREQUENCY (MHz) = 35.5 Watts CW out η ...
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... C −30_C OUTPUT POWER (WATTS) out Figure 11. Spectral Regrowth at 600 kHz versus Output Power T = −30_C C 25_C 85_C Vdc out I = 300 mA DQ 910 920 930 940 950 960 f, FREQUENCY (MHz) Figure 13. Power Gain versus Frequency MRFE6S9046NR1 MRFE6S9046GNR1 970 980 25_C 50 970 980 7 ...
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... DQ −5 650 750 850 950 1050 1150 f, FREQUENCY (MHz) Figure 14. Broadband Frequency Response −10 −20 −30 −40 −50 −60 −70 −80 600 kHz −90 −100 −110 Center 1.96 GHz MRFE6S9046NR1 MRFE6S9046GNR1 8 TYPICAL CHARACTERISTICS −6 7 − − −24 4 −30 10 1250 1350 1450 ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRFE6S9046NR1 MRFE6S9046GNR1 9 ...
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... INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 7.83 - j2.01 Figure 18. Pulsed CW Output Power versus Input Power @ 920 MHz MRFE6S9046NR1 MRFE6S9046GNR1 Ideal 50 49 P1dB = 47.25 dBm ( Actual ...
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... Rogers R04350, 0.020″, ε * Line length includes microstrip bends Description ATC600F560BT500XT ATC600F2R4BT500XT ATC600F6R8BT500XT C1825C103K1GAC ATC600F3R3BT500XT ATC600F4R7BT500XT ATC600F390BT500XT MCGPR63V477M13X26 - RH CRCW12064K70FKEA V SUPPLY + C11 C10 Z12 Z13 Z14 Z15 C12 = 3.66 r Part Number Manufacturer ATC ATC ATC Kemet ATC ATC ATC Multicomp Vishay MRFE6S9046NR1 MRFE6S9046GNR1 RF OUTPUT 11 ...
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... R1 C1 MRFE6S8046GN/MRFE6S9046GN Rev. 0 Figure 21. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — Production Test Fixture MRFE6S9046NR1 MRFE6S9046GNR1 C10 C12 C11 Device Data Freescale Semiconductor ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRFE6S9046NR1 MRFE6S9046GNR1 13 ...
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... MRFE6S9046NR1 MRFE6S9046GNR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 15 ...
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... MRFE6S9046NR1 MRFE6S9046GNR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 17 ...
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... MRFE6S9046NR1 MRFE6S9046GNR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 19 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 May 2009 • Initial Release of Data Sheet MRFE6S9046NR1 MRFE6S9046GNR1 20 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRFE6S9046NR1 MRFE6S9046GNR1 21 ...