MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 2

• Manufacturer Part Number: MRFE6S9046GNR1
• Description: MOSFET RF N-CH 45W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9046GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 19dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 300mA
• Voltage - Test: 28V
• Power - Output: 35.5W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 17.8W
• Power Gain (typ)@vds: 19dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: TO-270 WB GULL
• Pin Count: 5
• Input Capacitance (typ)@vds: 120@28VpF
• Output Capacitance (typ)@vds: 318@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 57%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/GSM/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRFE6S9046NR1 MRFE6S9046GNR1
2
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
Case Temperature 80°C, 45 W CW, 28 Vdc, I
Case Temperature 80°C, 18 W CW, 28 Vdc, I
(V
(V
(V
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 66 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
(4)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
GS
= 100 μAdc)
= 300 mAdc, Measured in Functional Test)
= 1 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(3)
Test Methodology
Characteristic
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
DQ
DQ
= 0 Vdc)
= 0 Vdc)
= 300 mA
= 300 mA
DD
= 28 Vdc, P
Symbol
Symbol
V
Rating
V
V
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
3
oss
out
rss
iss
ps
D
= 35.5 W CW, I
Symbol
R
17.5
Min
Min
Package Peak Temperature
0.1
—
—
—
—
—
—
54
—
θJC
1
2
DQ
= 300 mA, f = 960 MHz
260
Typ
318
120
Typ
- 13
2.2
3.1
0.3
0.6
19
57
—
—
—
1C (Minimum)
III (Minimum)
A (Minimum)
Value
Class
Freescale Semiconductor
1.3
1.8
(1,2)
Max
Max
0.4
10
—
—
—
—
—
- 7
1
1
3
4
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Unit
Unit
Vdc
Vdc
Vdc
dB
dB
°C
pF
pF
pF
%