MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 10

• Manufacturer Part Number: MRFE6S9046GNR1
• Description: MOSFET RF N-CH 45W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9046GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 19dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 300mA
• Voltage - Test: 28V
• Power - Output: 35.5W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 17.8W
• Power Gain (typ)@vds: 19dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: TO-270 WB GULL
• Pin Count: 5
• Input Capacitance (typ)@vds: 120@28VpF
• Output Capacitance (typ)@vds: 318@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 57%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/GSM/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRFE6S9046NR1 MRFE6S9046GNR1
10
53
52
51
50
49
48
47
46
45
44
43
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
23
versus Input Power @ 28 V @ 920 MHz
Figure 18. Pulsed CW Output Power
24
P1dB
P1dB = 47.57 dBm (57 W)
25
Test Impedances per Compression Level
26
P
in
7.83 - j2.01
P3dB = 48.22 dBm (66 W)
, INPUT POWER (dBm)
V
10 μsec(on), 10% Duty Cycle, f = 920 MHz
Z
DD
27
source
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
Ω
= 28 Vdc, I
28
DQ
29
= 300 mA, Pulsed CW
1.25 - j0.52
30
Z
load
Ω
31
Ideal
Actual
32
33
52
51
50
49
48
47
46
45
44
43
42
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
23
versus Input Power @ 28 V @ 960 MHz
Figure 19. Pulsed CW Output Power
24
P1dB
P1dB = 47.25 dBm (53 W)
P3dB = 47.89 dBm (62 W)
25
Test Impedances per Compression Level
26
P
in
3.79 - j6.51
, INPUT POWER (dBm)
V
10 μsec(on), 10% Duty Cycle, f = 960 MHz
Z
DD
27
source
Ω
= 28 Vdc, I
28
Freescale Semiconductor
DQ
29
= 300 mA, Pulsed CW
4.30 - j2.52
30
Z
RF Device Data
load
Ω
31
Ideal
Actual
32
33