MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 3
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MRFE6S9046GNR1
Manufacturer Part Number
MRFE6S9046GNR1
Description
MOSFET RF N-CH 45W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFE6S9046GNR1.pdf
(21 pages)
Specifications of MRFE6S9046GNR1
Transistor Type
N-Channel
Frequency
960MHz
Gain
19dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
300mA
Voltage - Test
28V
Power - Output
35.5W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
66V
Output Power (max)
17.8W
Power Gain (typ)@vds
19dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
TO-270 WB GULL
Pin Count
5
Input Capacitance (typ)@vds
120@28VpF
Output Capacitance (typ)@vds
318@28VpF
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
57%
Mounting
Surface Mount
Mode Of Operation
CDMA/GSM/GSM EDGE
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRFE6S9046GNR1
Manufacturer:
FREESCALE
Quantity:
1 400
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
Bandwidth
Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
P
out
P
IMD Symmetry @ 44 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Average Deviation from Linear Phase in 40 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 940 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
= 17.8 W Avg., 920 - 960 MHz EDGE Modulation
@ 1 dB Compression Point
out
= 45 W CW
`
30 dBc
out
Characteristic
= 45 W CW, f = 940 MHz
out
where IMD Third Order
(T
out
C
= 25°C unless otherwise noted)
out
= 35.5 W CW
= 45 W CW,
(continued)
Symbol
VBW
IMD
ΔP1dB
Delay
P1dB
EVM
SR1
SR2
G
ΔΦ
ΔG
G
η
Φ
ps
D
sym
F
res
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MRFE6S9046NR1 MRFE6S9046GNR1
DD
= 28 Vdc, I
0.021
0.006
- 62.5
42.5
Typ
- 72
0.2
0.9
3.1
2.1
45
55
65
20
19
DQ
DD
= 300 mA, 920-960 MHz
= 28 Vdc, I
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DQ
= 285 mA,
dBm/°C
% rms
dB/°C
MHz
MHz
Unit
dBc
dBc
dB
dB
W
ns
%
°
°
3