MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 3

• Manufacturer Part Number: MRFE6S9046GNR1
• Description: MOSFET RF N-CH 45W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9046GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 19dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 300mA
• Voltage - Test: 28V
• Power - Output: 35.5W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 17.8W
• Power Gain (typ)@vds: 19dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: TO-270 WB GULL
• Pin Count: 5
• Input Capacitance (typ)@vds: 120@28VpF
• Output Capacitance (typ)@vds: 318@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 57%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/GSM/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
Bandwidth
Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
P
out
P
IMD Symmetry @ 44 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Average Deviation from Linear Phase in 40 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 940 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
= 17.8 W Avg., 920 - 960 MHz EDGE Modulation
@ 1 dB Compression Point
out
= 45 W CW
`
30 dBc
out
Characteristic
= 45 W CW, f = 940 MHz
out
where IMD Third Order
(T
out
C
= 25°C unless otherwise noted)
out
= 35.5 W CW
= 45 W CW,
(continued)
Symbol
VBW
IMD
ΔP1dB
Delay
P1dB
EVM
SR1
SR2
G
ΔΦ
ΔG
G
η
Φ
ps
D
sym
F
res
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MRFE6S9046NR1 MRFE6S9046GNR1
DD
= 28 Vdc, I
0.021
0.006
- 62.5
42.5
Typ
- 72
0.2
0.9
3.1
2.1
45
55
65
20
19
DQ
DD
= 300 mA, 920-960 MHz
= 28 Vdc, I
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DQ
= 285 mA,
dBm/°C
% rms
dB/°C
MHz
MHz
Unit
dBc
dBc
dB
dB
W
ns
%
°
°
3