MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 6

• Manufacturer Part Number: MRFE6S9046GNR1
• Description: MOSFET RF N-CH 45W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9046GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 19dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 300mA
• Voltage - Test: 28V
• Power - Output: 35.5W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 17.8W
• Power Gain (typ)@vds: 19dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: TO-270 WB GULL
• Pin Count: 5
• Input Capacitance (typ)@vds: 120@28VpF
• Output Capacitance (typ)@vds: 318@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 57%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/GSM/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRFE6S9046NR1 MRFE6S9046GNR1
6
21
20
19
18
17
16
15
1
225 mA
150 mA
300 mA
Figure 6. Power Gain versus Output Power
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) CW
375 mA
10
Figure 5. Power Gain, Input Return Loss, EVM and Drain
19.5
19.4
19.3
19.2
19.1
18.9
18.8
18.7
18.6
18.5
19.6
19.5
19.4
19.3
19.2
19.1
18.9
18.8
18.7
18.6
Efficiency versus Frequency @ P
19
19
Efficiency versus Frequency @ P
V
f = 940 MHz
Figure 4. Power Gain, Input Return Loss and Drain
920
920
DD
G
= 28 Vdc
IRL
ps
925
925
TYPICAL CHARACTERISTICS
EVM
η
D
930
930
V
DD
G
= 28 Vdc, P
IRL
ps
V
I
DQ
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
DD
935
935
= 285 mA, EDGE Modulation
100
= 28 Vdc, P
η
D
out
940
940
= 35.5 W CW, I
out
−10
−20
−30
−40
−50
−60
−70
945
= 17.8 W (Avg.)
945
out
0.1
out
Figure 7. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
= 17.8 Watts Avg.
= 35.5 Watts CW
DD
DQ
950
950
= 28 Vdc, P
= 300 mA
955
955
versus Two - Tone Spacing
out
TWO−TONE SPACING (MHz)
960
960
= 44 W (PEP), I
1
58
57
56
55
54
53
52
51
50
49
48
42
41
40
39
38
6
5
4
3
2
1
IM7−L
IM7−U
Freescale Semiconductor
DQ
−16
−19
−22
−25
−28
−31
IM5−U
= 300 mA
−15
−20
−25
−30
−35
−40
10
IM3−L
IM5−L
RF Device Data
IM3−U
100