BFT92,215 NXP Semiconductors, BFT92,215 Datasheet - Page 5

• Manufacturer Part Number: BFT92,215
• Description: TRANS PNP 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFT92,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 14mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 20 @ 14 mA @ 10 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1655-2; 933347730215; BFT92 T/R

NXP Semiconductors
November 1992
handbook, halfpage
handbook, halfpage
PNP 5 GHz wideband transistor
L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.
I
Fig.4
(pF)
E
C c
75 Ω
= i
0.8
0.6
0.4
0.2
e
Fig.2 Intermodulation distortion test circuit.
1
0
= 0; f = 1 MHz; T
0
Collector capacitance as a function of
680 pF
collector-base voltage.
390 Ω
L2
j
= 25 C.
L1
L3
300 Ω
10
3.9 kΩ
680 pF
16 Ω
–V CB (V)
24 V
DUT
680 pF
820
Ω
MEA920
MEA919
20
75 Ω
5
handbook, halfpage
handbook, halfpage
V
Fig.3
Fig.5
V
(GHz)
h
CE
CE
f T
FE
100
= 10 V; T
= 10 V; f = 500 MHz; T
75
50
25
0
6
4
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
10
j
= 25 C.
20
20
Product specification
–I
–I
C
C
(mA)
(mA)
MEA347
MEA344
BFT92
30
30