BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet
BFG520W/X,115
Specifications of BFG520W/X,115
934030650115
BFG520W/X T/R
Related parts for BFG520W/X,115
BFG520W/X,115 Summary of contents
Page 1
DATA SHEET book, halfpage BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 M3D123 1998 Oct 15 ...
Page 2
Philips Semiconductors NPN 5 GHz wideband transistors FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, ...
Page 3
Philips Semiconductors NPN 5 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total ...
Page 4
Philips Semiconductors NPN 5 GHz wideband transistors CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage I (BR)CEO V emitter-base breakdown voltage (BR)EBO I collector leakage current CBO h ...
Page 5
Philips Semiconductors NPN 5 GHz wideband transistors 250 handbook, halfpage h FE 200 150 100 Fig.3 DC current gain as a function of collector current; typical values. 8 ...
Page 6
Philips Semiconductors NPN 5 GHz wideband transistors 30 handbook, halfpage gain (dB 900 MHz Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage ...
Page 7
Philips Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth o 180 mA Fig.10 Common emitter input reflection coefficient (S handbook, full pagewidth o 180 I = ...
Page 8
Philips Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth o 180 mA Fig.12 Common emitter reverse transmission coefficient (S handbook, full pagewidth o 180 mA ...
Page 9
Philips Semiconductors NPN 5 GHz wideband transistors SPICE parameters for the BFG590W die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC ...
Page 10
Philips Semiconductors NPN 5 GHz wideband transistors PACKAGE OUTLINE Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 ...
Page 11
Philips Semiconductors NPN 5 GHz wideband transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...
Page 12
Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...