BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 4
![TRANS NPN 4.5V 21GHZ SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. Z
1998 Oct 21
V
V
V
I
h
C
C
C
f
G
F
P
ITO
SYMBOL
j
CBO
T
S
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
L1
NPN wideband transistor
c
e
re
max
21
S
max
2
is optimized for noise; Z
is the maximum power gain, if K > 1. If K < 1 then G
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
PARAMETER
L
is optimized for gain.
I
I
V
I
I
I
I
see Fig.4
I
T
I
T
I
T
I
I
Class-AB; < 1 : 2; t
V
I
Z
C
C
E
C
E
C
C
C
C
C
C
C
C
amb
amb
amb
S
S
S
CE
CE
= 100 A; I
= i
= 50 A; I
= 5 mA; I
= 80 mA; V
= i
= 0; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
= 8 mA; V
= 8 mA; V
= 80 mA; V
=
=
= Z
= 5 V; V
= 3.6 V; I
e
c
= 25 C; see Fig.5
= 25 C; see Figs 7 and 8
= 25 C; see Fig.8
= 0; V
= 0; V
opt
opt
S opt
4
CB
; see Fig.13
; see Fig.13
; Z
CONDITIONS
max
= 2 V; f = 1 MHz;
B
E
CB
EB
CE
CE
BE
L
= 0
C
CQ
CE
CE
CE
CE
CE
= 0
= MSG; see Figs 6, 7 and 8.
= Z
= 0.5 V; f = 1 MHz
= 0
= 2 V; f = 1 MHz
= 0
= 2 V; f = 900 MHz;
= 2 V; f = 2 GHz;
= 2 V; see Fig.3
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 1 mA; f = 2 GHz
= 2 V; f = 2 GHz;
L opt
p
; note 2
= 5 ms;
14.5
4.5
1
40
MIN.
60
1.4
2.2
340
21
16
12
1.2
1.8
20
28
TYP.
Product specification
BFG480W
70
100
MAX.
V
V
V
nA
pF
pF
fF
GHz
dB
dB
dB
dB
dBm
dBm
UNIT