BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 9
![TRANS NPN 4.5V 21GHZ SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
Noise data
V
APPLICATION INFORMATION
RF performance at T
1998 Oct 21
900
2000
Pulsed; class-AB; < 1 : 2; t
CE
(MHz)
NPN wideband transistor
f
= 2 V; typical values.
MODE OF OPERATION
2
4
6
8
10
20
40
60
80
2
4
6
8
10
12
14
20
40
60
80
(mA)
I
C
1.1
1.1
1.2
1.2
1.3
1.6
2.0
2.3
2.9
2.4
2.0
1.8
1.8
1.8
1.8
1.8
1.9
2.3
2.6
2.8
(dB)
s
F
60 C in a common emitter test circuit (see Figs 18 and 19).
min
0.31
0.26
0.49
0.41
0.27
0.28
0.39
0.49
0.57
0.45
0.57
0.46
0.44
0.43
0.44
0.44
0.46
0.52
0.56
0.60
p
= 5 ms
mag
96.1
106.6
118.4
131.7
143.2
166.2
176.0
179.5
177.3
171.9
178.9
175.7
171.7
168.4
165.3
163.7
158.3
150.2
147.7
146.1
angle
(GHz)
2
f
0.21
0.14
0.12
0.10
0.10
0.07
0.07
0.07
0.18
0.09
0.08
0.09
0.09
0.09
0.10
0.10
0.11
0.14
0.18
0.22
()
r
n
V
(V)
3.6
CE
9
handbook, halfpage
V
CE
F min
(dB)
Fig.13 Minimum noise figure as a function of
(mA)
= 2 V.
I
4
3
2
1
0
CQ
1
0
collector current; typical values.
20
(mW)
100
P
2 GHz
L
900 MHz
40
typ. 13.5
(dB)
G
p
Product specification
60
BFG480W
I C (mA)
MGR634
typ. 45
80
(%)
C