BFR 182W E6327 Infineon Technologies, BFR 182W E6327 Datasheet - Page 2

• Manufacturer Part Number: BFR 182W E6327
• Description: TRANSISTOR NPN RF 12V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BFR 182W E6327

• Package / Case: SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 8V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 70
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR 182W E6327; BFR182WE6327; BFR182WE6327INTR; BFR182WE6327XT; SP000011053

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
(verified by random sampling)
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CE
CB
EB
= 1 mA, I
= 10 mA, V
= 1 V, I
= 4 V, V
= 15 V, V
= 4 V, I
B
C
E
BE
= 0
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0 V, T
A
= 85 °C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
-
Values
typ.
100
1
5
1
-
-
max.
140
30
70
30
50
BFR182W
2010-04-06
-
Unit
V
nA
-