PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 8

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
1999 Jul 23
handbook, full pagewidth
handbook, full pagewidth
UHF wideband transistor
f = 1 GHz; V
Z
(1) G = 16 dB
(2) G = 15 dB
(3) G = 14 dB
(4) NF = 1.3 dB
(5) NF = 1.5 dB
(6) NF = 1.7 dB.
f = 2 GHz; V
Z
(1) G
(2) G = 9 dB
(3) G = 8 dB
(4) G = 7 dB
(5) NF = 1.8 dB
(6) NF = 2 dB
(7) NF = 2.2 dB.
o
o
= 50 .
= 50 .
max
= 9.95 dB
CE
CE
= 6 V; I
= 6 V; I
Fig.12 Common emitter available gain, noise and stability circles; typical values.
Fig.13 Common emitter available gain, noise and stability circles; typical values.
C
C
= 5 mA;
= 5 mA;
unstable region
source
180
180
unstable region
0
0
source
135
135
135
0.2
135
0.2
0.2
0.2
(1)
0.2
0.2
0.5
(1)
0.5
0.5
(2)
0.5
(2)
(3)
(3)
0.5
0.5
opt
(4)
(6)
(5)
90
90
8
90
1
90
1
1
1
1
1
opt
(4)
(5)
(6)
(7)
2
2
region load
unstable
2
2
2
2
5
5
region load
unstable
45
45
45
45
5
5
5
5
MGS522
MGS523
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
PRF957