BFG325/XR,215 NXP Semiconductors, BFG325/XR,215 Datasheet - Page 3
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BFG325/XR,215
Manufacturer Part Number
BFG325/XR,215
Description
TRANS NPN 6V 35MA 14GHZ SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG325XR215.pdf
(12 pages)
Specifications of BFG325/XR,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.1dB @ 2GHz
Gain
18.3dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 15mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
14000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
210 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1977-2
934057939215
BFG325/XR T/R
934057939215
BFG325/XR T/R
Philips Semiconductors
6. Thermal characteristics
Table 6:
[1]
7. Characteristics
Table 7:
T
[1]
9397 750 14247
Product data sheet
Symbol Parameter
R
Symbol Parameter
I
h
C
C
C
f
G
NF
P
IP3
s
CBO
T
j
FE
L(1dB)
th(j-sp)
CBS
CES
EBS
21
max
= 25 C; unless otherwise specified.
2
T
G
K is the Rollet stability factor:
MSG = maximum stable gain.
sp
max
is the temperature at the soldering point of the collector pin.
is the maximum power gain, if K > 1. If K < 1 then G
thermal resistance from junction to solder point
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
Thermal characteristics
Characteristics
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
I
P
T
T
C
stg
j
tot
T
sp
K
[1]
is the temperature at the soldering point of the collector pin.
=
1
---------------------------------------------------------- -
Parameter
collector current (DC)
total power dissipation
storage temperature
junction temperature
Limiting values
+
Ds
2
2
Conditions
I
I
V
V
V
I
T
I
T
I
Z
I
T
I
T
s
E
C
C
C
C
C
C
–
21
amb
amb
S
s
amb
amb
CB
CE
EB
f = 1.8 GHz
f = 3 GHz
= 0 A; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
=
s
= Z
11
= 5 V; f = 1 MHz; emitter grounded
= 5 V; f = 1 MHz; base grounded
= 0.5 V; f = 1 MHz; collector grounded
Rev. 01 — 2 February 2005
= 25 C
= 25 C
= 25 C; Z
= 25 C; Z
opt
2
L
s
12
–
= 50
; I
…continued
s
C
CB
22
max
= 3 mA; V
2
= 5 V
CE
CE
CE
CE
CE
CE
= MSG, see
where
S
S
= 3 V
= 3 V; f = 1 GHz;
= 3 V; f = 1.8 GHz;
= 3 V; T
= 3 V; f = 1.8 GHz;
= 3 V; f = 1.8 GHz;
= Z
= Z
L
L
Ds
CE
= 50
= 50
Conditions
T
sp
amb
= 3 V; f = 2 GHz
=
Figure
Conditions
T
sp
s
90 C
= 25 C;
11
4.
90 C
s
22
–
s
12
NPN 14 GHz wideband transistor
s
21
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
.
Min
-
60
-
-
-
-
-
-
-
-
-
-
BFG325/XR
[1]
Min
-
-
-
Typ
-
100
0.26
0.27
0.53
14
18.3
14
10
1.1
8.7
19.4
65
[1]
Typ
405
Max
35
210
+175
175
Max
15
200
0.4
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
mA
mW
3 of 12
C
C
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dBm
dBm