BFG325/XR,215 NXP Semiconductors, BFG325/XR,215 Datasheet - Page 7
![TRANS NPN 6V 35MA 14GHZ SOT143R](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG325/XR,215
Manufacturer Part Number
BFG325/XR,215
Description
TRANS NPN 6V 35MA 14GHZ SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG325XR215.pdf
(12 pages)
Specifications of BFG325/XR,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.1dB @ 2GHz
Gain
18.3dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 15mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
14000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
210 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1977-2
934057939215
BFG325/XR T/R
934057939215
BFG325/XR T/R
Philips Semiconductors
8. Application information
9397 750 14247
Product data sheet
Table 8:
Sequence
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
SPICE parameters of the BFG325 DIE
Parameter
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
RE
RC
CJE
VJE
MJE
CJC
VJC
MJC
XCJC
FC
TF
XTF
VTF
ITF
PTF
TR
KF
AF
TNOM
EG
XTB
XTI
Q1.AREA
Rev. 01 — 2 February 2005
NPN 14 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Value
26.6
200
1
40
105
2.3
2.114
10
1
2.5
10
0
1.5
3.6
1.5
2.6
185.6
890
0.294
77.06
601
0.159
1
0.7
8.1
10
1000
150
0
0
0
1
25
1.014
0
8
2.5
BFG325/XR
Unit
aA
-
-
V
mA
fA
-
-
-
V
A
aA
-
fF
mV
-
fF
mV
-
-
-
ps
-
V
mA
deg
ns
-
-
eV
-
-
-
C
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