MZ0912B50Y,114 NXP Semiconductors, MZ0912B50Y,114 Datasheet - Page 8
![TRANSISTOR POWER NPN SOT443A](/photos/5/65/56555/mz0912b50y_tray_sml.jpg)
MZ0912B50Y,114
Manufacturer Part Number
MZ0912B50Y,114
Description
TRANSISTOR POWER NPN SOT443A
Manufacturer
NXP Semiconductors
Datasheet
1.MZ0912B50Y114.pdf
(12 pages)
Specifications of MZ0912B50Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
8dB
Power - Max
150W
Current - Collector (ic) (max)
3A
Mounting Type
Surface Mount
Package / Case
SOT-443A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
933994040114
MZ0912B50Y TRAY
MZ0912B50Y TRAY
MZ0912B50Y TRAY
MZ0912B50Y TRAY
Philips Semiconductors
PACKAGE OUTLINE
1997 Feb 18
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
3.5
2.9
3.4
3.2
0.1
X
seating plane
Y
3
1
2
24 max
Fig.8 SOT443A.
16.5
3.1
8
0.5 Y
4 min
0.5 Y
1.7 max
10.5
max
0.5 X
max
6.4
0.5 X
10.5
max
MBC663
max
23
MZ0912B50Y
Product specification