MZ0912B50Y,114 NXP Semiconductors, MZ0912B50Y,114 Datasheet - Page 8

• Manufacturer Part Number: MZ0912B50Y,114
• Description: TRANSISTOR POWER NPN SOT443A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 8dB
• Power - Max: 150W
• Current - Collector (ic) (max): 3A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994040114; MZ0912B50Y TRAY; MZ0912B50Y TRAY

Philips Semiconductors
PACKAGE OUTLINE
1997 Feb 18
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
3.5
2.9
3.4
3.2
0.1
X
seating plane
Y
3
1
2
24 max
Fig.8 SOT443A.
16.5
3.1
8
0.5 Y
4 min
0.5 Y
1.7 max
10.5
max
0.5 X
max
6.4
0.5 X
10.5
max
MBC663
max
23
MZ0912B50Y
Product specification