BFG25A/X,215 NXP Semiconductors, BFG25A/X,215 Datasheet - Page 2

• Manufacturer Part Number: BFG25A/X,215
• Description: TRANS NPN 5V 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG25A/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 0.5 mA @ 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934008590215; BFG25A/X T/R; BFG25A/X T/R

NXP Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
V
V
I
P
h
f
G
F
SYMBOL
C
T
FE
Low current consumption
(100 A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
CBO
CEO
tot
NPN 5 GHz wideband transistor
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
PARAMETER
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
PINNING
PIN
1
2
3
4
T
I
I
f = 500 MHz; T
I
f = 1 GHz; T
I
f = 1 GHz;
I
Rev. 04 - 27 November 2007
C
C
C
C
C
s
=
= 0.5 mA; V
= 1 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
collector
emitter
base
emitter
165 C
opt
; T
DESCRIPTION
CONDITIONS
amb
amb
CE
CE
=
= 25 C
CE
CE
CE
amb
= 1 V;
= 1 V; f = 1 GHz;
= 25 C
opt
= 1 V
= 1 V;
= 1 V;
; T
= 25 C
amb
= 25 C
handbook, 2 columns
50
3.5
MIN.
Marking code: %MU.
Top view
1
4
Fig.1 SOT143B.
80
5
18
1.8
2
TYP.
Product specification
BFG25A/X
8
5
6.5
32
200
MAX.
MSB014
3
2
2 of 12
V
V
mA
mW
GHz
dB
dB
dB
UNIT