BFG25A/X,215 NXP Semiconductors, BFG25A/X,215 Datasheet - Page 7

• Manufacturer Part Number: BFG25A/X,215
• Description: TRANS NPN 5V 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG25A/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 0.5 mA @ 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934008590215; BFG25A/X T/R; BFG25A/X T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
I
I
C
C
= 1 mA; V
= 1 mA; V
CE
CE
= 1 V; f = 1000 MHz; Z
= 1 V; f = 2000 MHz; Z
– j
+ j
– j
+
j
Fig.13 Common emitter noise figure circles; typical values.
Fig.14 Common emitter noise figure circles; typical values.
0
0
0
0.2
0.2
O
0.2
0.2
O
= 50
= 50 ; Maximum stable gain = 8.9 dB; F
Maximum stable gain = 12.4 dB; F
0.5
0.5
0.5
0.5
0.2
0.2
0.2
MSG
9 dB
7.5 dB
Rev. 04 - 27 November 2007
6 dB
0.5
0.5
0.5
12.4 dB
MSG
11 dB
9 dB
6 dB
1
1
1
1
1
1
1
4 dB
6 dB
min
4 dB
3 dB
min
= 2.4 dB;
2
2
2
3 dB
= 2 dB;
stability
circle
*
opt
opt
2
2
2
2
5
5
5
= 0.78, 14 ; R
*
= 0.72, 38 ; R
10
10
10
F
MCD149
MCD148
min
OPT
5
5
5
5
= 2.4 dB
10
10
10
10
stability
circle
F
n
n
/50 = 2.6.
min
/50 = 1.9.
OPT
= 2 dB
Product specification
BFG25A/X
7 of 12