BFG505,215 NXP Semiconductors, BFG505,215 Datasheet - Page 7

• Manufacturer Part Number: BFG505,215
• Description: TRANS NPN 6V 18MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG505,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018760215; BFG505 T/R; BFG505 T/R

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NXP Semiconductors
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NPN 9 GHz wideband transistors
F min
V
Fig.11 Minimum noise figure and associated
Z
V
(dB)
o
CE
CE
= 50 .
5
4
3
2
1
0
= 6 V.
= 6 V; I
10
2
5 mA
1.25 mA
available gain as functions of frequency.
I C = 1.25 mA
c
= 1.25 mA; f = 900 MHz.
F min
5 mA
stability
circle
10
G ass
180
3
f (MHz)
0
135
135
0.2
0.2
0.2
MRA651
pot. unst.
region
0.5
0.5
10
Fig.12 Noise circle figure.
Rev. 04 - 22 November 2007
20
15
10
0
G ass
5
4
(dB)
5
0.5
90
90
1
1
1
F = 3 dB
F = 2 dB
F = 1.5 dB
F min = 1. 2 dB
2
2
2
OPT
5
45
45
5
5
MRA652
BFG505; BFG505/X
0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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