BFG540W,115 NXP Semiconductors, BFG540W,115 Datasheet - Page 10
![TRANS NPN 8V 120MA SOT343N](/photos/5/65/56512/568-sot-343n_sml.jpg)
BFG540W,115
Manufacturer Part Number
BFG540W,115
Description
TRANS NPN 8V 120MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540W115.pdf
(17 pages)
Specifications of BFG540W,115
Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
100 @ 40mA @ 8V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934032310115
BFG540W T/R
BFG540W T/R
BFG540W T/R
BFG540W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFG540W,115
Manufacturer:
INFINEON
Quantity:
21 000
NXP Semiconductors
2000 May 23
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 40 mA; Z
= 40 mA.
Fig.20 Common emitter forward transmission coefficient (s
o
= 50 .
Fig.19 Common emitter input reflection coefficient (s
180
180
o
o
40 MHz
50
0
135
135
0.2
0.2
135
135
40
o
o
0.2
o
o
30
0.5
0.5
3 GHz
20
0.5
10
90
90
10
1
1
1
90
90
o
o
o
o
3 GHz
2
40 MHz
2
2
BFG540W/X; BFG540W/XR
5
11
45
45
); typical values.
45
45
o
21
o
5
5
o
o
); typical values.
MLC053
MLC054
0
o
0
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540W