BFG540W,115 NXP Semiconductors, BFG540W,115 Datasheet - Page 14

• Manufacturer Part Number: BFG540W,115
• Description: TRANS NPN 8V 120MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG540W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 100 @ 40mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934032310115; BFG540W T/R; BFG540W T/R

NXP Semiconductors
2000 May 23
NPN 9 GHz wideband transistor
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
14
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
BFG540W/X; BFG540W/XR
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
BFG540W
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R