BFG540W,115 NXP Semiconductors, BFG540W,115 Datasheet - Page 13
![TRANS NPN 8V 120MA SOT343N](/photos/5/65/56512/568-sot-343n_sml.jpg)
BFG540W,115
Manufacturer Part Number
BFG540W,115
Description
TRANS NPN 8V 120MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540W115.pdf
(17 pages)
Specifications of BFG540W,115
Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
100 @ 40mA @ 8V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934032310115
BFG540W T/R
BFG540W T/R
BFG540W T/R
BFG540W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFG540W,115
Manufacturer:
INFINEON
Quantity:
21 000
NXP Semiconductors
PACKAGE OUTLINES
2000 May 23
NPN 9 GHz wideband transistor
Plastic surface-mounted package; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343N
1.1
0.8
A
max
0.1
A 1
4
1
0.4
0.3
b p
y
IEC
b 1
0.7
0.5
b 1
D
e
e 1
0.25
0.10
c
JEDEC
b p
2.2
1.8
D
3
2
REFERENCES
0
1.35
1.15
E
w
B
M
B
1.3
e
scale
EIAJ
13
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
BFG540W/X; BFG540W/XR
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
BFG540W
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343N