BFG540W,115 NXP Semiconductors, BFG540W,115 Datasheet - Page 5
![TRANS NPN 8V 120MA SOT343N](/photos/5/65/56512/568-sot-343n_sml.jpg)
BFG540W,115
Manufacturer Part Number
BFG540W,115
Description
TRANS NPN 8V 120MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540W115.pdf
(17 pages)
Specifications of BFG540W,115
Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
100 @ 40mA @ 8V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934032310115
BFG540W T/R
BFG540W T/R
BFG540W T/R
BFG540W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFG540W,115
Manufacturer:
INFINEON
Quantity:
21 000
NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.4
f = 1 GHz; T
Fig.6
(GHz)
CE
f
h FE
250
200
150
100
T
= 8 V.
50
12
0
10
8
4
0
10
−2
DC current gain as a function of
Transition frequency as a function of
collector current; typical values.
collector current; typical values.
1
amb
= 25 C.
10
−1
1
1
10
10
I
C
V
V
I C (mA)
CE
CE
(mA)
MRA749
MLC044
= 8 V
= 4 V
10
10
2
2
5
handbook, halfpage
Fig.5
I
C
(pF)
C re
= 0; f = 1 MHz.
0.8
0.6
0.4
0.2
1
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
BFG540W/X; BFG540W/XR
4
8
Product specification
V CB (V)
BFG540W
MRA750
12