BFG540,215 NXP Semiconductors, BFG540,215 Datasheet - Page 5
![TRANS NPN 15V 9GHZ SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG540,215
Manufacturer Part Number
BFG540,215
Description
TRANS NPN 15V 9GHZ SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540X215.pdf
(14 pages)
Specifications of BFG540,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
400mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
60 @ 40mA @ 8V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934018840215
BFG540 T/R
BFG540 T/R
BFG540 T/R
BFG540 T/R
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
Fig.5
(mW)
C
P
CE
= 0; f = 1 MHz.
tot
(pF)
C re
600
400
200
0.8
0.6
0.4
0.2
0
1
0
10 V.
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.3 Power derating curve.
50
4
100
8
150
V CB (V)
T
s
MBG249
(
MRA750
o
C)
200
Rev. 05 - 21 November 2007
12
handbook, halfpage
handbook, halfpage
V
Fig.4
f = 1 GHz; T
Fig.6
(GHz)
CE
f T
h FE
250
200
150
100
= 8 V; T
50
12
0
10
8
4
0
10
2
1
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
10
1
1
BFG540; BFG540/X;
1
10
Product specification
BFG540/XR
10
I C (mA)
V CE = 8 V
V CE = 4 V
I C (mA)
MRA749
MRA751
5 of 14
10
10
2
2