BFR 106 E6327 Infineon Technologies, BFR 106 E6327 Datasheet

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BFR 106 E6327

Manufacturer Part Number
BFR 106 E6327
Description
TRANSISTOR RF NPN 15V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 106 E6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain
8.5dB ~ 13dB
Power - Max
700mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 70mA, 8V
Current - Collector (ic) (max)
210mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
700 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR106E6327XT
SP000011044
NPN Silicon RF Transistor
• High linearity low noise RF transistor
• 22dBm OP1dB and 31dBm OIP3
• For UHF/VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFR106
Maximum Ratings at T
Parameter
Collector-emitter voltage,
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
T
For calculation of R
A
A
S
@ 900MHz,8V,70mA
S
≤ 73 °C
is measured on the collector lead at the soldering point to the pcb
= 25°C
= -55°C
thJA
please refer to Application Note AN077 Thermal Resistance
1)
A
2)
= 25 °C, unless otherwise specified
Marking
R7s
1=B
1
Symbol
V
V
V
V
I
I
P
T
T
Symbol
R
Pin Configuration
C
B
J
Stg
CEO
CES
CBO
EBO
tot
thJS
2=E
3
3=C
-55 ... 150
Value
Value
≤ 110
210
700
150
16
15
20
20
21
3
Package
SOT23
2010-12-03
BFR106
1
Unit
V
mA
mW
°C
Unit
K/W
2

Related parts for BFR 106 E6327

BFR 106 E6327 Summary of contents

Page 1

NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 @ 900MHz,8V,70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Power gain, maximum available mA 900 MHz mA ...

Page 5

Total power dissipation P 800 mW 600 500 400 300 200 100 ƒ tot S 100 120 °C 150 BFR106 2010-12-03 ...

Page 6

SPICE Parameter (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. ...

Page 7

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 8

Datasheet Revision History: 3 Dezember 2010 This datasheet replaces the revisions from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 9

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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