BFR 193 E6327 Infineon Technologies, BFR 193 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFR 193 E6327
• Description: TRANSISTOR NPN RF 12V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 193 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10dB ~ 15dB
• Power - Max: 580mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 70
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 580 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR 193 E6327; BFR193E6327INTR; BFR193E6327XT; SP000011056

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
10
600
400
300
200
100
-
0
3
2
1
0
10
0
/ P
-7
totDC
20
10
-6
=
40
10
-5
( t
p
60
)
10
-4
80
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
-3
100
= ( T
10
-2
120 °C
S
)
T
t
s
p
S
150
10
0
5
Permissible Pulse Load R
K/W
10
10
10
10
3
2
1
0
10
-7
10
-6
10
-5
10
-4
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
-3
10
2007-03-30
=
-2
BFR193
( t
t
s
p
p
)
10
0