BFS 17S H6327 Infineon Technologies, BFS 17S H6327 Datasheet - Page 3

• Manufacturer Part Number: BFS 17S H6327
• Description: TRANS RF NPN 15V 25MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BFS 17S H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (db Typ @ F): 3dB ~ 5dB @ 800MHz
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 800 MHz
Transducer gain
I
f = 500 MHz
Third order intercept point at output
V
Z
1dB Compression point
I
f = 800 MHz
C
C
C
C
C
S
CB
CE
EB
CE
= 2 mA, V
= 25 mA, V
= 2 mA, V
= 20 mA, V
= 20 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, I
Sopt
, Z
C
CE
CE
L
CE
CE
= 20 mA, f = 800 MHz,
CE
= Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, Z
Lopt
BE
BE
S
S
S
CB
= 50
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
L
L
A
= 50 ,
= 50 ,
,
= 25°C, unless otherwise specified
3
Symbol
f
C
C
C
F
|S
IP
P
T
cb
ce
eb
-1dB
21e
3
|
2
min.
1.3
1
-
-
-
-
-
-
-
Values
22.5
0.55
typ.
1.4
2.5
0.2
0.9
14
11
3
2007-03-30
max.
1.45
0.8
5
-
-
-
-
-
-
BFS17S
Unit
GHz
pF
dB
dB
dBm
-