BFR 183W H6327 Infineon Technologies, BFR 183W H6327 Datasheet - Page 4
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BFR 183W H6327
Manufacturer Part Number
BFR 183W H6327
Description
TRANS RF NPN 12V 65MA SOT323
Manufacturer
Infineon Technologies
Datasheet
1.BFR_183W_E6327.pdf
(7 pages)
Specifications of BFR 183W H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain
18.5dB
Power - Max
450mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 15mA, 8V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR183WH6327XT
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
1.0345
14.772
1.2149
3.4276
0.85331
1.0112
23.077
22.746
1.8773
1.1967
1.0553
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
115.98
0.14562
10.016
0.013483
2.5426
1.3435
1.0792
0.36823
0
0.3
0
0
0.54852
4
-
A
-
A
-
V
-
deg
-
fF
-
L
L
L
L
L
L
C
C
C
Valid up to 6GHz
BI
BO
EI
EO
CI
CO
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
BE
CB
CE
=
=
=
=
=
=
=
=
=
0.80799
16.818
0.99543
1.3559
0.43801
0.20486
0.45354
0.50905
460.11
0.053823
0.75
1.11
300
0.57
0.4
0.43
0.5
0
0.41
61
101
175
BFR183W
2007-03-30
-
fA
-
fA
mA
-
V
fF
-
V
eV
K
nH
nH
nH
nH
nH
nH
fF
fF
fF