MBC13900T1 Freescale Semiconductor, MBC13900T1 Datasheet - Page 11

• Manufacturer Part Number: MBC13900T1
• Description: IC TRANS NPN RF LOW NOISE SC70-4
• Manufacturer: Freescale Semiconductor

Specifications of MBC13900T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6.5V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
• Gain: 15dB ~ 22dB
• Power - Max: 188mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MBC13900TR

5.2
Figure 20
design goals for the circuit are:
Typical performance that can be expected from this circuit at 3.0 V V
The component values can be changed to enhance the performance of a particular parameter but usually
at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can
be sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3,
C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused
traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device.
Freescale Semiconductor
NF < 1.35 dB
Gain > 14 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
1900 MHz LNA
shows the schematic and
RF In
C3
C7
L4
Figure 20. 1900 MHz LNA Schematic
Figure 21
MBC13900 Technical Data, Rev. 1.1
L1
R4
shows the component placement for a 1900 MHz LNA. The
R2
R3
C1
CC
V
CC
and 5.0 mA is listed in
R5
R1
L2
C2
C4
Applications Information
RF Out
Table
6.
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