MBC13900T1 Freescale Semiconductor, MBC13900T1 Datasheet - Page 9

• Manufacturer Part Number: MBC13900T1
• Description: IC TRANS NPN RF LOW NOISE SC70-4
• Manufacturer: Freescale Semiconductor

Specifications of MBC13900T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6.5V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
• Gain: 15dB ~ 22dB
• Power - Max: 188mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MBC13900TR

5
A flexible applications board topology has been developed to demonstrate the performance of the
MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance
requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples
and assembly information is available from Freescale under part number KITMBC13900.
5.1
Figure 18
design goals for the circuit are:
Freescale Semiconductor
NF < 1.2 dB
Gain > 19 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Applications Information
900 MHz LNA
shows the schematic and
Figure 16. One dB Compression Point versus Collector Current
Figure 17. One dB Compression Point versus Collector Current
-2.0
-6.0
-2.0
-6.0
-10
-14
-10
-14
6.0
2.0
6.0
2.0
14
10
14
10
0
0
Figure 19
2.0
MBC13900 Technical Data, Rev. 1.1
2.0
4.0
4.0
I
I
C
C
6.0
6.0
shows the component placement for a 900 MHz LNA. The
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
8.0
8.0
10
10
12
12
14
14
f = 900 MHz
f = 1.9 GHz
16
16
3.0 V
3.0 V
2.0 V
2.0 V
18
18
20
20
Applications Information
9