MBC13900T1 Freescale Semiconductor, MBC13900T1 Datasheet - Page 4

• Manufacturer Part Number: MBC13900T1
• Description: IC TRANS NPN RF LOW NOISE SC70-4
• Manufacturer: Freescale Semiconductor

Specifications of MBC13900T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6.5V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
• Gain: 15dB ~ 22dB
• Power - Max: 188mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MBC13900TR

Typical Performance Characteristics
4
4
Output Third Order Intercept [Note 3]
Note: 1. Pulse width ≤300 µs, duty cycle ≤2% pulsed.
2.
3.
(V
(V
(V
(V
MAG
Typical Performance Characteristics
CE
CE
CE
CE
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
Z
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
in
=
and Z
S 21
---------- K
S 12
out
⎛
⎝
C
C
C
C
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
±
matched for optimum IP3.
Characteristic
K
2
Figure 3. h
–
1
⎞
⎠
, if K > 1,
Table 4. Electrical Characteristics (continued)
0.35
0.25
0.15
0.05
162
160
158
156
154
152
150
148
0.3
0.2
0.1
0
0
0
Figure 2. Capacitance versus Voltage
FE
MBC13900 Technical Data, Rev. 1.1
2.0
, DC Current Gain versus Collector Current
MSG
0.5
4.0
=
C
1.0
C
I
ob
cb
C
, COLLECTOR CURRENT (mA)
6.0
V
S 21
----------
S 12
CB
, REVERSE VOLTAGE (V)
1.5
8.0
, if K < 1
2.0
10
Symbol
OIP3
12
2.5
14
3.0
f = 1.0 MHz
16
Min
-
-
-
-
3.5
2.0 V
3.0 V
18
4.0
20
13.5
Typ
18
21
19
Freescale Semiconductor
Max
-
-
-
-
dBm
Unit