MBC13900T1 Freescale Semiconductor, MBC13900T1 Datasheet - Page 12

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MBC13900T1

Manufacturer Part Number
MBC13900T1
Description
IC TRANS NPN RF LOW NOISE SC70-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MBC13900T1

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6.5V
Frequency - Transition
15GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain
15dB ~ 22dB
Power - Max
188mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MBC13900TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBC13900T1G
Manufacturer:
NXP
Quantity:
1 450
Applications Information
12
V
3.0
3.5
CC
R6
C3
V
CC
(mA)
C5
5.0
6.1
I
C
Table 6. Typical 1900 MHz LNA Performance
Gnd
Figure 21. 1900 MHz LNA Board Layout
R2
(dB)
1.28
1.29
MBC13900 Technical Data, Rev. 1.1
NF
R3
C1
C4
50 Ω Insertion
C2
Gain (dB)
14.4
14
Component Value
C1
C2
C3
C4
C5
C7
L1
L2
L3
L4
R1
R2
R3
R4
R5
Vias
PCB
Output IP3
(dBm)
20.2
19
1.0 µF
22 pF
22 pF
0.01 µF
1.0 µF
0.6 pF
8.2 nH
3.3 nH
<0.5 nH
1.2 nH
133 Ω
49.9 kΩ
8.2 Ω
0 Ω
4.7 Ω
FR4
Comments
Optional Bypassing
DC Block and output match
DC Block and input match
RF and IM subharmonic short to ground
RF and IM subharmonic short to ground
Input match, RF / S
Bias decoupling, input match
Output match, bias decoupling
Emitter L on board (distance to GND vias)
S
Bias
Bias
Stability and S
Jumper
Stability, Gain, S
D = 15 mil
ε
r
11
=4.5, h=25 mil, t=1.75 mil
Input Return
Loss (dB)
10.4
10.8
22
Freescale Semiconductor
22
improvement
11
compromise
Output Return
Loss (dB)
10.7
11

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