MBC13900T1 Freescale Semiconductor, MBC13900T1 Datasheet - Page 3

• Manufacturer Part Number: MBC13900T1
• Description: IC TRANS NPN RF LOW NOISE SC70-4
• Manufacturer: Freescale Semiconductor

Specifications of MBC13900T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6.5V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
• Gain: 15dB ~ 22dB
• Power - Max: 188mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MBC13900TR

Freescale Semiconductor
Thermal Resistance, Junction-to-Case
Note: To calculate the junction temperature use T
OFF Characteristic
Collector-Emitter Breakdown Voltage (I
Collector-Base Breakdown Voltage (I
Emitter-Base Breakdown Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
Base Cutoff Current (V
ON Characteristic
DC Current Gain (V
Dynamic Characteristics
Current Gain Bandwidth Product
Performance Characteristic
Insertion Gain
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
Minimum Noise Figure
Associated Gain at Minimum Noise Figure
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
lead adjacent to the package body.
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 15 mA, f = 0.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
1
CE
1
Characteristic
CE
= 2.0 V, I
Characteristic
EB
= 5.0 V, I
CB
= 2.0 V, I
= 7.0 V, I
C
= 5.0 mA)
B
E
C
= 0)
C
= 0.1 mA, I
Table 4. Electrical Characteristics
E
= 0)
C
= 0.1 mA, I
MBC13900 Technical Data, Rev. 1.1
Table 3. Thermal Characteristic
= 0)
= 0.1 mA, I
C
J
E
= 0)
= (P
B
= 0)
= 0)
D
x R
MSG, MAG
θJC
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
|S
NF
I
I
I
G
) + T
h
CBO
EBO
CEO
f
21
FE
NF
τ
min
|
2
C
. The case temperature measured on collector
Symbol
R
θJC
18.5
13.5
16.5
12.5
17.5
Min
100
6.5
8.0
3.0
22
18
21
-
-
-
-
-
-
-
-
-
-
-
-
19.5
14.5
17.5
13.5
18.5
Typ
7.5
4.0
0.8
0.9
0.8
0.9
12
15
23
19
22
22
16
21
15
-
-
-
-
Max
400
Electrical Specifications
Max
200
0.1
0.1
0.1
0.9
1.1
0.9
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
°C/W
Unit
GHz
Unit
Vdc
Vdc
Vdc
µA
µA
µA
dB
dB
dB
dB
-
3