BFR 182 B6663 Infineon Technologies, BFR 182 B6663 Datasheet - Page 3
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BFR 182 B6663
Manufacturer Part Number
BFR 182 B6663
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BFR_182_E6327.pdf
(7 pages)
Specifications of BFR 182 B6663
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain
12dB ~ 18dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 8V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR182B6663XT
SP000056362
SP000056362
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
1
C
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
CB
CE
EB
= 15 mA, V
= 3 mA, V
= 3 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
CE
CE
CE
CE
CE
CE
CE
= 8 V, Z
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
S
S
BE
BE
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
1)
= 50
= 50
,
,
= 25°C, unless otherwise specified
, Z
, Z
L
L
= Z
= Z
,
,
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
0.32
typ.
0.2
0.8
0.9
1.3
9.5
15
18
12
8
max.
0.5
2007-03-30
-
-
-
-
-
-
-
-
-
BFR182
Unit
GHz
pF
dB
dB