BCM856DS,115 NXP Semiconductors, BCM856DS,115 Datasheet - Page 5

• Manufacturer Part Number: BCM856DS,115
• Description: TRANS PNP DBL 65V 100MA 6-TSOP
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCM856DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 175MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 290
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062057115

NXP Semiconductors
BCM856BS_BCM856DS_1
Product data sheet
Table 8.
T
[1]
[2]
[3]
[4]
Symbol
V
C
C
f
NF
Per device
h
V
T
amb
FE1
BE
BE1
c
e
V
V
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
/h
= 25 C unless otherwise specified.
BEsat
BE
V
FE2
BE2
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Characteristics
Parameter
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
h
V
FE
BE
matching
matching
Rev. 01 — 7 August 2008
…continued
Conditions
V
I
V
I
V
I
f = 1 MHz
V
I
f = 1 MHz
V
I
f = 100 MHz
V
I
R
f = 10 Hz to
15.7 kHz
V
I
R
f = 1 kHz;
B = 200 Hz
V
I
V
I
C
C
E
C
C
C
C
C
C
CE
CE
CB
EB
CE
CE
CE
CE
CE
S
S
BCM856BS; BCM856DS
= i
= 2 mA
= 10 mA
= i
= 10 mA;
= 0.2 mA;
= 0.2 mA;
= 2 mA
= 2 mA
= 2 k ;
= 2 k ;
= 0.5 V;
= 5 V;
= 5 V;
= 10 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
e
c
= 0 A;
= 0 A;
PNP/PNP matched double transistors
[2]
[2]
[3]
[4]
Min
-
-
-
100
-
-
0.9
-
600
Typ
-
-
10
175
1.6
3.1
1
-
650
© NXP B.V. 2008. All rights reserved.
Max
2.2
-
-
-
-
-
2
700
760
Unit
mV
mV
pF
pF
MHz
dB
dB
mV
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