BCM857BV,115 NXP Semiconductors, BCM857BV,115 Datasheet - Page 12

• Manufacturer Part Number: BCM857BV,115
• Description: TRANS PNP DBL 45V 100MA SOT-666
• Manufacturer: NXP Semiconductors

Specifications of BCM857BV,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 175MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Gain Bandwidth Product Ft: 175 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 175 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059435115

NXP Semiconductors
BCM857BV_BS_DS_6
Product data sheet
Fig 18. Wave soldering footprint SOT457 (SC-74)
5.05
Dimensions in mm
Rev. 06 — 28 August 2009
5.30
1.40
4.30
PNP/PNP matched double transistors
BCM857BV/BS/DS
0.45
1.45 4.45
msc423
© NXP B.V. 2009. All rights reserved.
solder lands
solder resist
occupied area
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