BCV63,215 NXP Semiconductors, BCV63,215 Datasheet - Page 2

TRANS PNP 30V 100MA DUAL SOT143B

BCV63,215

Manufacturer Part Number
BCV63,215
Description
TRANS PNP 30V 100MA DUAL SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV63,215

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V, 6V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V / 110 @ 2mA, 700mV
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-143, SOT-143B, TO-253AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933831480215
BCV63 T/R
BCV63 T/R
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BCV63_63B
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
[1]
Symbol
Transistor TR2
V
h
Pin
1
2
3
4
Type number
Type number
BCV63
BCV63B
BCV63
BCV63B
FE
CEO
Group selection will be done on TR1. Due to matched dies, h
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Parameter
collector-emitter voltage
DC current gain
Quick reference data
Pinning
Ordering information
Marking codes
BCV63
BCV63B
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
base TR2
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 4 August 2010
Description
plastic surface-mounted package; 4 leads
…continued
open base
V
Conditions
CE
= 700 mV; I
Marking code
*D5
*D6
NPN general-purpose double transistors
C
Simplified outline
= 2 mA
FE
BCV63; BCV63B
4
values for TR2 are the same as for TR1.
1
[1]
[1]
2
3
Min
-
110
200
Typ
-
-
-
Graphic symbol
© NXP B.V. 2010. All rights reserved.
TR1
3
2
Max
6
800
450
TR2
Version
SOT143B
006aab228
Unit
V
1
4
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