BCV63,215 NXP Semiconductors, BCV63,215 Datasheet - Page 4

• Manufacturer Part Number: BCV63,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV63,215

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V, 6V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V / 110 @ 2mA, 700mV
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933831480215; BCV63 T/R; BCV63 T/R

NXP Semiconductors
7. Characteristics
BCV63_63B
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol Parameter
Per transistor
I
V
V
V
V
V
V
Transistor TR1
h
V
f
C
Transistor TR2
h
CBO
T
j
FE
FE
CEsat
BEsat
CEsat
BEsat
BE
CEsat
BE
c
= 25
Group selection will be done on TR1. Due to matched dies, h
V
V
BEsat
BE

C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
collector-base
cut-off current
collector-emitter
saturation voltage
base-emitter
saturation voltage
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
Characteristics
BCV63
BCV63B
BCV63
BCV63B
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 August 2010
Conditions
V
V
T
I
I
I
I
V
I
I
I
I
V
f = 100 MHz
V
I
V
I
I
I
V
C
B
C
B
C
C
C
C
E
C
C
C
j
CB
CB
CE
CE
CB
CE
CE
= 150 C
= 10 mA;
= 0.5 mA
= 10 mA;
= 0.5 mA
= 100 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 2 mA
= 100 mA; I
= 2 mA;
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 10 V;
= 700 mV;
= 700 mV
e
= 0 A; f = 1 MHz
C
C
CE
E
E
= 2 mA
= 10 mA;
CE
B
B
B
= 0 A
= 0 A;
NPN general-purpose double transistors
= 5 V
= 5 mA
= 5 mA
= 5 mA
= 5 V
FE
BCV63; BCV63B
[2]
[2]
[3]
[3]
[1]
[3]
values for TR2 are the same as for TR1.
Min
-
-
-
-
110
200
-
-
600
-
100
-
110
200
-
-
Typ
-
-
75
700
-
250
850
650
-
-
4
-
250
700
-
-
© NXP B.V. 2010. All rights reserved.
Max
15
5
300
-
800
450
650
-
750
820
-
-
800
450
-
-
mV
mV
mV
mV
MHz
mV
Unit
nA
A
mV
mV
pF
mV
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