BCV63,215 NXP Semiconductors, BCV63,215 Datasheet - Page 5

• Manufacturer Part Number: BCV63,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV63,215

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V, 6V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V / 110 @ 2mA, 700mV
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933831480215; BCV63 T/R; BCV63 T/R

NXP Semiconductors
BCV63_63B
Product data sheet
Fig 1.
Fig 3.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
500
400
300
200
100
10
10
10
10
10
0
10
4
3
2
V
BCV63B: DC current gain as a function of
collector current; typical values
I
as a function of collector current; typical
values
BCV63B: Collector-emitter saturation voltage
−1
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 150 C
= 25 C
= 55 C
= 150 C
= 25 C
= 55 C
1
1
(1)
(3)
(2)
10
10
(1)
(2)
(3)
10
10
2
2
All information provided in this document is subject to legal disclaimers.
I
I
C
C
(mA)
(mA)
mgt727
mgt729
10
10
Rev. 4 — 4 August 2010
3
3
Fig 2.
Fig 4.
V
(mV)
(mV)
V
BEsat
BE
1200
1000
(1) T
(2) T
(3) T
1200
1000
(1) T
(2) T
(3) T
800
600
400
200
800
600
400
200
0
0
10
10
V
BCV63B: Base-emitter voltage as a function of
collector current; typical values
I
BCV63B: Base-emitter saturation voltage as a
function of collector current; typical values
C
−1
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
NPN general-purpose double transistors
= 5 V
= 10
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
10
−1
1
(1)
(2)
(3)
BCV63; BCV63B
1
(1)
(2)
(3)
10
10
10
© NXP B.V. 2010. All rights reserved.
2
10
I
C
I
2
C
(mA)
mgt730
mgt728
(mA)
10
10
3
3
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