MT47H32M16HR-3 IT:F TR Micron Technology Inc, MT47H32M16HR-3 IT:F TR Datasheet - Page 5

DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R

MT47H32M16HR-3 IT:F TR

Manufacturer Part Number
MT47H32M16HR-3 IT:F TR
Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H32M16HR-3 IT:F TR

Density
512 Mb
Maximum Clock Rate
667 MHz
Package
84FBGA
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
0.45 ns
Operating Temperature
-40 to 85 °C
Organization
32Mx16
Address Bus
15b
Access Time (max)
450ps
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Extended Mode Register 2 (EMR2) .................................................................................................................. 84
Extended Mode Register 3 (EMR3) .................................................................................................................. 85
Initialization .................................................................................................................................................. 86
ACTIVATE ...................................................................................................................................................... 89
READ ............................................................................................................................................................. 91
WRITE .......................................................................................................................................................... 102
PRECHARGE ................................................................................................................................................. 112
REFRESH ...................................................................................................................................................... 113
SELF REFRESH .............................................................................................................................................. 114
Power-Down Mode ....................................................................................................................................... 116
Precharge Power-Down Clock Frequency Change .......................................................................................... 123
Reset ............................................................................................................................................................. 124
ODT Timing .................................................................................................................................................. 126
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 82
Posted CAS Additive Latency (AL) ............................................................................................................... 82
READ with Precharge ................................................................................................................................. 95
READ with Auto Precharge .......................................................................................................................... 97
CKE Low Anytime ...................................................................................................................................... 124
MRS Command to ODT Update Delay ........................................................................................................ 128
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
© 2004 Micron Technology, Inc. All rights reserved.
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