MT47H32M16HR-3 IT:F TR Micron Technology Inc, MT47H32M16HR-3 IT:F TR Datasheet - Page 93

• Manufacturer Part Number: MT47H32M16HR-3 IT:F TR
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-3 IT:F TR

• Density: 512 Mb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 250mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 45: Consecutive READ Bursts
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Three subsequent elements of data-out appear in the programmed order following
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
DQ
DQ
CK
CK
DO n.
DO b.
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
t CCD
RL = 3
t CCD
NOP
NOP
T1
T1
RL = 4
t
AC,
93
t
DQSCK, and
READ
READ
Bank,
Bank,
Col b
Col b
T2
T2
T2n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
t
T3
T3
DQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
DO
n
T3n
T3n
NOP
NOP
T4
T4
DO
n
Transitioning Data
T4n
T4n
NOP
NOP
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T5
T5
DO
b
T5n
T5n
T6
NOP
T6
NOP
Don’t Care
DO
b
T6n
T6n
READ